Mask and method for forming dynamic random access memory (DRAM) contacts
US6194306A · kind A · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Dec 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask (10) includes a pattern (14) having a plurality of substantially rectangular shapes (20) arranged longitudinally in each of a plurality of substantially parallel rows (22). The rows (22) are evenly spaced apart from each other. The substantially rectangular shapes (20) in each row (22) are evenly spaced apart from each other and offset from the substantially rectangular shapes (20) in neighboring rows (22). The substantially rectangular shapes (20) define a plurality of T-shapes (24) connected to and offset from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.