Method for forming CU-thin film
US6194316A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 6, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Aug 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a Cu-thin film includes the steps of coating a dispersion containing Cu-containing ultrafine particles individually dispersed therein on a semiconductor substrate having recessed portions, such as wiring grooves, via holes or contact holes, which have an aspect ratio ranging from 1 to 30; firing the coated semiconductor substrate in an atmosphere which can decompose organic substances present in the dispersion, but never oxidizes Cu to form a Cu-thin film on the substrate; then removing the Cu-thin film on the substrate except for that present in the recessed portions to thus level the surface of the substrate and to form the Cu-thin film in the recessed portions. The method permits the complete embedding or filling of the recessed portions of LSI substrates having a high aspect ratio with a Cu-thin film and thus permits the formation of a conductive, uniform and fine pattern, and further requires a low processing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.