Photo receptor with reduced noise
US6194770A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Mar 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
An improved low voltage, small surface area, high signal-to-noise ratio photo gate includes a layer of photoreceptive semiconductor material having an impurity concentration selected to enhance the formation of hole electron pairs in response to photons impinging on a surface of the substrate, an electrode extending from the surface of the substrate into the substrate a substantial distance; an insulating layer disposed between the electrode and the substrate for electrically insulating the electrode from the substrate; so that upon the application of an electrical potential to the electrode, a potential well is formed in the substrate surrounding the electrode for accumulating charge generated when photons impinge on the surface of the substrate surrounding the electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.