Semiconductor integrated circuit device
US6195305A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 8, 1999 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Apr 8, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating on the power supply voltage supplied through the external terminal or the boosted voltage formed by the internal voltage generation circuit is constituted by a first MOSFET with a gate insulation film having a large thickness adapted to the power supply voltage or boosted voltage, and a second internal circuit operating on the low voltage is constituted by a second MOSFET with a gate insulation film having a small thickness adapted to the low voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.