Semiconductor laser and optical disk device using the laser
US6195374A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2000 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Apr 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.