Patent · US Expired

Mass production of silicon dioxide film by liquid phase deposition method

US6197110A · kind A · utility

7Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 29, 1999
Grant dateMar 6, 2001
Priority date
Expiry dateApr 29, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S414/136
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A liquid phase deposition method of mass producing substantially uniform silicon dioxide films on wafers by forming wafer sets from at least four wafers. The wafer sets are placed in a slotted polytetrafluroethylene polymer boat wherein a proper and short distance between the front surface of a wafer and another surface is created. Finally, a substantially uniform silicon dioxide film is deposited on the wafer surfaces by contacting the wafer sets with an aqueous supersaturated silicon dioxide solution comprising a mixture of hydrofluosilicic acid and boric acid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.