Amorphous silicon photoreceptor and method for making same
US6197471A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 25, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/165
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A new photoreceptor is provided which comprises a conductive substrate and a photoconductive layer of 5 micra or less in thickness on the substrate. The photoreceptor has a dark decay greater than 20 seconds and contains less than 5% total hydrogen. The substrate is selected from the group consisting of alloys of aluminum, chromium, iron, molybdenum, nickel or tungsten. In addition, the substrate can be a nonconductive material, such as plastic, provided with an electrically conductive layer. A new method for making the improved photoreceptor comprises providing a conductive substrate and forming a photoconductive layer of 5 micra or less in thickness on said substrate by depositing an amorphous material containing silicon and hydrogen atoms wherein said substrate has a negative potential between -40 and -100 volts during the forming of said layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.