Method for manufacturing semiconductor light emitting device
US6197609A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
Abstract
Semiconductor layers forming a light emitting layer and including an n-type layer and p-type layer are formed onto a substrate, then the n-type layer is exposed by removing a part of the laminated semiconductor layers. p-side electrode and n-side electrode are then respectively formed on the p-type layer on the surface of the laminated semiconductor layers and the exposed n-type layer, respectively in an electrically connected manner, followed by dicing of the substrate from the exposed n-type layer to the substrate at portions at which breaking of the substrate is performed. Then a protection film is provided on the entire surface of the laminated semiconductor layers as to expose the p-side and n-side electrodes, and breaking of the substrate is performed at dicing portions into individual chips. Consequently, semiconductor light emitting devices can be obtained by breaking the wafer into individual chips without etching the protection film and without damaging the protection film at the time of breaking. Also, the light emitting devices can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.