Method for crystallizing amorphous silicon thin-film for use in thin-film transistors and thermal annealing apparatus therefor
US6197623A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Oct 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for crystallizing an amorphous silicon thin-film is provided, in which amorphous silicon thin-films on a large-area glass substrate for use in a TFT-LCD (TFT-Liquid Crystal Display) are crystallized uniformly and quickly by a scanning method using a linear lamp to prevent deforming of the glass substrate. The crystallization method includes the steps of forming an amorphous silicon thin-film on a glass substrate, and illuminating a linear light beam on the amorphous silicon thin-film from the upper portion of the glass substrate according to a scanning method. The crystallization method is applied to a polycrystalline silicon thin-film transistor manufacturing method including the steps of forming an amorphous silicon thin-film on a glass substrate, and crystallizing the amorphous silicon of the thin-film transistor according to a scanning method using a linear light beam. In the scanning illumination of the linear light beam, either one of a supporting member of the glass substrate and a light source is relatively moved by a scanning driver apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.