Process for fabricating integrated circuit devices having thin film transistors
US6197663A · kind A · utility
86Cited by
16References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
A process for fabricating an integrated circuit device is disclosed. The integrated circuit has a plurality of TFTs and an electrical interconnect structure. In the process, at least some constituents of the TFTs are formed on a first substrate. At least the interconnect structure is formed on a second substrate. The two substrates are laminated together to form the integrated circuit device having fully formed TFTs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.