Method for the fabrication of a doped silicon layer

US6197666A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE
• Martin Franosch · Munich, DE
• Reinhard Stengl · Stadtbergen, DE
• Hans Reisinger · Grünwald, DE
• Matthias Ilg · Fishkill, US

Key dates

• Filing date: Sep 3, 1999
• Grant date: Mar 6, 2001
• Expiry date: Sep 3, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for the fabrication of a doped silicon layer, includes carrying out deposition by using a process gas containing SiH.sub.4, Si.sub.2 H.sub.6 and a doping gas. The doped silicon layer which is thus produced can be used both as a gate electrode of an MOS transistor and as a conductive connection. At a thickness between 50 and 200 nm it has a resistivity less than or equal to 0.5 m.OMEGA.cm.