Electro optical devices with reduced filter thinning on the edge pixel photosites and method of producing same
US6198093A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Nov 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention relates to semiconductor devices with a reduced filter thinning of outer photosites and a method for reducing the thinning of filter layers of the outer photosites. A semiconductor device includes a main surface including a plurality of photosites and bonding pads defined in the main surface, wherein the photosites include inner photosites and outer photosites. The semiconductor device further includes a clear layer deposited over the main surface exclusive of the bonding pads and outer photosites, and a first primary color filter layer deposited over at least first inner photosite and first outer photosite, the first primary color filter transmitting a primary color.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.