Distributed photodiode structure
US6198118A · kind A · utility
10Cited by
12References
32Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 9, 1998 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Mar 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A distributed photodiode structure is shown having a plurality of diffusions formed in a uniform pattern on a first surface of a semiconductor substrate and interconnected by a plurality of connective traces. The diffusions are minimum geometry dots for a standard semiconductor fabrication process that are spaced apart from one another by an interval that is less than an average distance travelled by photo-generated carriers in the substrate before recombination. A conductive backplane is formed on a second surface of the semiconductor substrate to produce an inverted induced signal for noise cancelling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.