Shielded integrated circuit capacitor connected to a lateral transistor
US6198123A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1997 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Aug 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
An integrated circuit (IC) capacitor offers reduced sensitivity to parasitic capacitance, reduced-size, and increased noise immunity, such as for use in digital-to-analog converters (DACs), analog-to-digital converters (ADCs), switched-capacitor filters, and other IC circuits. The capacitor includes a first polysilicon layer, a superjacent second polysilicon layer separated from the first polysilicon layer by an insulator, and an overlying metal layer separated from the second polysilicon layer by an insulator. The metal layer provides a shield that is connected to a known voltage, or to the first polysilicon layer. When connected to the first polysilicon layer, the overlying metal layer also provides additional parallel capacitance, thereby reducing the integrated circuit area of the capacitor. In one example, the overlying metal layer is a second metal layer that is also used, together with a first metal layer, for interconnecting IC components.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.