Vertical type insulated gate transistor
US6198129A · kind A · utility
11Cited by
6References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 1999 |
| Grant date | Mar 6, 2001 |
| Priority date | — |
| Expiry date | Nov 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
At a portion below a gate electrode of a vertical type MOS transistor having a gate electrode and source electrodes formed over the surface of a semiconductor substrate and a drain electrode formed over the back thereof, a P type impurity diffusion layer spaced away from P well diffusion layers which surround sources, is formed in the semiconductor substrate which serves as a drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.