Application of electron field emission from diamond grown by a multiple pulsed laser process
US6200183A · kind A · utility
3Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30457
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The preparation and use of diamond as an electron emission material is disclosed. Satisfactory measurements were conducted on diamond coatings deposited on WC-Co alloy by a multiple pulsed laser process. The electron emission was measured in a diode configuration with a diamond surface-anode spacing of 20 and 50 .mu.m in vacuum at P=10.sup.-7 Torr. Current densities of 6 mA/cm were calculated at an applied of voltage of 3000 V (for 20 .mu.m). Analysis proved that electron field emission provided by a diamond grown by a multiple pulsed laser process proved to satisfactorily meet the specified demands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.