Method of forming a storage capacitor
US6200845A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
The present invention provides a method of forming at least a bottom electrode of a capacitor in a semiconductor device. The method comprises the steps forming a first insulation film on a multilayer structure over a semiconductor substrate; forming at least a contact hole which penetrates through the first insulation film and the multilayer structure to reach a surface of the semiconductor substrate; selectively removing the first insulation film to form mask patterns on the multilayer structure; forming a single conductive film which extends within the at least contact hole and over the multilayer structure as well as cover the mask patterns; forming a second insulation film on the single conductive film; partially removing the second insulation film and the single conductive film over the mask patterns so that tops of the mask patterns are shown; and removing remaining parts of the second insulation film and the mask patterns to form at least a bottom electrode comprising a single conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.