Method of producing semiconductor device comprising insulation layer having improved resistance and semiconductor device produced thereby
US6200888A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2000 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | May 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising an insulation film covering a semiconductor chip so as to expose electrodes or pads fabricated in the chip and wiring lines located on the insulation film and connected to the respective electrodes or pads is produced by a method which comprises: providing a semiconductor chip provided with an insulation film covering the chip so as to expose a conductor layer for electrodes or pads fabricated in the chip, ion milling the surface of the chip provided with the insulation film by a mixed gas of argon and hydrogen, forming a patterned conductor layer for wiring lines on the ion-milled surface of the chip, and dry etching the surface of the chip provided with the insulation film and the patterned conductor layer by nitrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.