Transistor of SIC
US6201280A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1998 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Feb 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.