Field effect transistor with double sided airbridge
US6201283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Sep 8, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A field effect transistor with a double sided airbridge comprises a substrate containing a conductive region and source, drain and gate electrodes disposed on the substrate. The gate electrode has a finger portion with a first end secured to the substrate between the source and drain electrodes and a second end, and a double sided airbridge portion flaring outwardly from the second end and having opposed first and second extremities. A first gate pad is disposed on said substrate outwardly from the source electrode and is connected to the first extremity. A second gate pad is disposed on said substrate outwardly from the drain electrodes and is connected to the second extremity. The gate pads serve to support the airbridge gate finger so as to reduce stress on the gate finger. The first and second gate pads receive and transmit signals through the airbridge and to and from the gate finger.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.