System for biasing a synthetic free layer in a magnetoresistance sensor
US6201673A · kind A · utility
207Cited by
19References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 2, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Apr 2, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A system and method for providing a magnetoresistive head is disclosed. The method and system include providing a spin valve including a synthetic free layer. The synthetic free layer includes a ferromagnetic layer. The method and system also include providing an antiferromagnetic biasing layer exchange coupled to a first portion of the ferromagnetic layer. The antiferromagnetic biasing layer magnetically biases the synthetic free layer to ensure the single domain structure and reduce noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.