Strongly complex coupled DFB laser series
US6201824A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1998 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | Dec 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4087
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A two-dimensional matrix of complex coupled (gain or loss coupled) semiconductor DFB lasers is disclosed. The matrix includes several parallel branches of series lasers, each series having a plurality of lasers which are grown on the same wafer. The parallel branches are combined at either one end or both ends with either an integrated on-chip optical combiner or an external coupler to obtain a single optical output port. Each laser in the series comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodic etching grooves through either the active region or the lossy QW region. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to thereby ensure no substantial interaction between lasers in the series. Bragg wavelengths of lasers from different series interleave with each other or differ incrementally along a cavity length direction. The sub tuning wavelength range covered by one laser in the matrix falls outside of the stopbands of all other lasers which are not only in the same series but also physi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.