Surface emitting semiconductor laser device and process for producing the same
US6201825A · kind A · utility
21Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 1999 |
| Grant date | Mar 13, 2001 |
| Priority date | — |
| Expiry date | May 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is to provide a surface emitting semiconductor laser device having a long life time and uniform light output characteristics. A periphery of an upper surface and a side surface of a mesa structure is covered with a silicon oxide nitride film 34 as an inorganic insulating film, the mesa structure comprising a lower DBR 16 of a first conductive type formed on a first primary surface of an n-type GaAs substrate 12, having formed thereon an active region 24, an upper DBR 26 containing an AlAs layer 32 as the lowermost layer, and a p-type GaAs contact layer 28.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.