Method of producing a thin-film platinum temperature-sensitive resistor for a thin-film microstructure sensor
US6203673A · kind A · utility
10Cited by
10References
3Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Nov 30, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 .ANG.. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.