Patent · US Expired

Laser approaches for diamond synthesis

US6203865A · kind A · utility

13Cited by
4References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 20, 1999
Grant dateMar 20, 2001
Priority date
Expiry dateJul 20, 2019

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/483
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method for producing well-crystallized adherent diamond layers on WC--Co substrates. An array of focused laser beams is scanned across the WC--Co sample. Useful lasers include the excimer, YAG:Nd, and carbon dioxide types. The process is conducted in open air with carbon dioxide and nitrogen gases delivered for shrouding the substrate. A luminous plasma is found a few mm above the WC--Co insert. The duration of the deposition process in a typical case is approximately 40 s. This typically gives 20-40 .mu.m thick coatings. The vertical growth rate is about 1 .mu.m/s.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.