Laser approaches for diamond synthesis
US6203865A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/483
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing well-crystallized adherent diamond layers on WC--Co substrates. An array of focused laser beams is scanned across the WC--Co sample. Useful lasers include the excimer, YAG:Nd, and carbon dioxide types. The process is conducted in open air with carbon dioxide and nitrogen gases delivered for shrouding the substrate. A luminous plasma is found a few mm above the WC--Co insert. The duration of the deposition process in a typical case is approximately 40 s. This typically gives 20-40 .mu.m thick coatings. The vertical growth rate is about 1 .mu.m/s.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.