Fabrication method of capacitor for integrated circuit
US6204111A · kind A · utility
47Cited by
10References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Jan 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
Abstract
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.