Method for making electrical contacts and junctions in silicon carbide
US6204160A · kind A · utility
2Cited by
16References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making electrical contacts and junctions in silicon carbide that concurrently incorporates and activates dopants from a gaseous ambient. The low temperature processing of the present invention prevents the formation of crystalline defects during annealing and preserves the quantitative chemical properties of the silicon carbide. Improved activation of dopants incorporated in a silicon carbide sample is provided for making the electrical contacts and junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.