Low dielectric constant porous films
US6204202A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.