Semiconductor memory device and method for producing same
US6204527A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
Abstract
A semiconductor memory device comprises: a semiconductor substrate; a semiconductor region of a first conductive type formed in the semiconductor substrate; a diffusion region of a second conductive type different from the first conductive type, the diffusion region being formed on the surface of the semiconductor region; a trench formed in the semiconductor substrate so as to be adjacent to the diffusion region; a capacitor insulator film formed on a portion of a side surface of the trench, which extends from a position at a predetermined depth of the trench to a bottom portion of the trench, and on a bottom surface of the trench; a storage node formed so that a surface of the storage node buried in the trench has the same depth as that of the predetermined depth; a first insulator film formed in a portion of the side surface of the trench above the position of the predetermined depth of the trench, the first insulator having a window in a region contacting the diffusion region; and a storage node electrode formed on the storage node so as to bury the trench, the uppermost surface of a region of the storage node electrode contacting the diffusion region via the window being formed…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.