Titanium nitride diffusion barrier for use in non-silicon technologies and method
US6204560A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1998 |
| Grant date | Mar 20, 2001 |
| Priority date | — |
| Expiry date | Apr 20, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.