Method for manufacturing a semiconductor device
US6207469A · kind A · utility
4Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Oct 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.