Thin film transistor having a crystallization seed layer and a method for manufacturing thereof
US6207481A · kind A · utility
24Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Dec 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
A thin film transistor and a method of manufaturing a thin film transistor are such that a crystallization seed layer is included in the transistor to crystallize the amorphous silicon to polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.