Nonvolatile memory and method for fabricating the same
US6207506A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Nonvolatile memory capable of programming and erasure and method for fabricating the same, the method comprising the steps of (1) forming an oxide film on a first conduction type semiconductor substrate, (2) conducting an annealing in an NO or N.sub.2 O ambient to convert the oxide film into a vertical lamination of a first silicon oxynitride region containing nitrogen and a second silicon oxynitride region containing relatively less nitrogen compared to the first silicon oxynitride region formed on the substrate, (3) patterning a gate electrode on the second oxynitride region, (4) forming second conduction type source, and drain impurity diffusion regions in surfaces of the substrate on both sides of the gate electrode, whereby facilitating a simple and easy fabrication process, a low programming voltage, a high performance, and a high device reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.