Apparatus and method for electron beam lithography and semiconductor device
US6207965A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31776
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Each of the longitudinal and lateral widths of a beam size is varied by a beam size controller using a reference size (absolute dimensions) defined by a reference size defining portion as a reference. The beam size is subjected to two-dimensional variations (pseudo-variations) by combining such one-dimensional variations. Current amount measuring portion measures current amount corresponding to the two-dimensional variations of the beam size, and measured values are estimated from the current amount. An offset amount calculating portion calculates optimum values of constants of beam size correction formulae such that the offset amount from each set value is minimized or such that conformity to the size of the pattern to be transferred on the sample is achieved. The feedback of the optimum values is provided to the beam size correction formulae. Beam size correction can be carried out with high accuracy even in ultrafine regions less than 1.0 .mu. m, and differences between pattern dimensions attributable to longitudinal dependence can be eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.