Light emitting diode with transparent window layer
US6207972A · kind A · utility
7Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jan 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor transition layer to reduce contact resistance between an overlying transparent window layer and an underlying transparent current diffusion layer formed on a double heterostructure light generation region. Optimum performance is achieved employing the transition layer with a ZnO transparent window layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.