Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
US6207976A · kind A · utility
67Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group element and S as a VI element and having a thickness of at least two monolayers or thicker. A first electrode is formed on the first intermediate layer, being electrically connected to the first surface layer with an ohmic contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.