High performance active gate drive for IGBTs
US6208185A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/0406
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An active drive circuit for high power IGBTs provides optimized switching performance for both turn-on and turn-off by incorporating a three-stage action to improve performance characteristics. The gate drive circuit includes a semiconductor switch such as a MOSFET connected in series with a low resistance gate turn-on resistor between the supply line and the gate input line, and a parallel connected bipolar transistor. During the first and third stages of turn-on, the MOSFET switch is turned on to provide rapid charging of the gate, whereas during the second stage the bipolar transistor is turned on to provide a controlled level of current charging of the gate. Similarly, a switch such as an MOSFET is connected in series with a low resistance gate turn-off resistor between the turn-off supply voltage line and the gate input line, and a bipolar transistor is connected in parallel therewith across the supply line and the gate input line. During the first and second stages of turn-off, the MOSFET switch is turned on to provide rapid discharging of the gate whereas during the second stage the bipolar transistor is turned on to provide a controlled level of discharge current from the g…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.