High quality factor capacitor
US6208500A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
An improved high quality factor capacitive device is implemented on a single, monolithic integrated circuit. The new layout techniques improve the quality factor (Q) of the capacitor by reducing intrinsic resistance of the capacitor by reducing the distance between the metal contacts of the top and bottom conductive plates. The layout techniques require laying out the top conductive plate of the capacitor in strips such that metal contacts from the bottom conductive plate pass in between the strips and through the dielectric layer. Alternatively, the apertures may be etched into the top conductive plate so that metal contacts pass through the apertures and connect to the bottom conductive plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.