Highly compact vertical cavity surface emitting lasers
US6208681A · kind A · utility
44Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 1999 |
| Grant date | Mar 27, 2001 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a highly compact vertical cavity surface emitting laser structure formed by a lateral oxidation process. Specifically, the present invention allows for the use of well-controlled oxidized regions to bound and to define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.