Thermally stable dielectric coatings
US6210749A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention pertains to a method for producing thermally stable multi-layer coatings and the coatings produced therefrom. The multi-layer coating is comprised of a first coating produced from hydrogen silsesquioxane having a thickness of 1.25 to 2.25 .mu.m and a second coating comprising silicon dioxide having a thickness of at least 100 nm. The method for producing the first coating comprises applying a fillerless hydrogen silsesquioxane resin composition onto a substrate and thereafter heating the hydrogen silsesquioxane resin at a temperature of 150.degree. C. to 500.degree. C. for a sufficient period of time to produce a crack-free coating having a thickness of 1.25 .mu.m to 2.25 .mu.m. The second coating is produced by depositing, preferably by PECVD, silicon dioxide over the first coating at a thickness of at least 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.