Solid-state image sensor
US6211509A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1999 |
| Grant date | Apr 3, 2001 |
| Priority date | — |
| Expiry date | Mar 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
Abstract
A MOS-type solid-state image sensor has a plurality of pixel units arranged on a p-type Si substrate in a matrix format. Each pixel unit has a photoelectric conversion portion including a photodiode, and a signal extraction portion including an amplification MOS transistor. Each element isolation region for isolating the pixel units from each other has a field oxide film formed on the substrate and a p-type diffusion layer formed in the substrate layer immediately below the oxide film to have a higher carrier impurity concentration than the substrate layer. The bottom portion of each element isolation region is positioned deeper than the bottom portion of a depletion layer extending from the p-n junction of the photodiode to the substrate in an equilibrium state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.