Patent · US Expired

Focused ion beam formation of angled optoelectronic devices

US6214178A · kind A · utility

10Cited by
3References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 1998
Grant dateApr 10, 2001
Priority date
Expiry dateDec 22, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/1085
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Fabrication of an optoelectronic device is enhanced by using a focused ion beam to prepare one or more of the device's facet surfaces. In particular, a facet may be oriented at a nearly arbitrary angled with respect to the waveguide within the device by controlling the orientation between the focused ion beam source and the device waveguide. Such facets are useful as antireflection and refractive beamsteering surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.