Silicon processing method
US6214736A · kind A · utility
8Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 1999 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Oct 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma process is described which produces an undamaged and uncontaminated silicon surface by consuming silicon by continuous oxidation through a surface oxide layer and a simultaneous etch of the exposed silicon oxide surface. The surface silicon dioxide layer thickness is controlled as an equilibrium between oxide growth from oxygen atoms reaching the silicon surface and etching of the oxide surface. The silicon dioxide protects the silicon surface from plasma damage and from contamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.