Light-emitting diode with divided light-emitting region
US6215132A · kind A · utility
3Cited by
10References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1997 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Oct 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device for generating light with the aid of a semiconducting material consisting of two electrically conducting contact layers and at least one layer, arranged therebetween, of semiconducting material which comprises a light-emitting semiconducting layer which is divided into at least two permanently parallel-connected sub-regions, delimited by semiconducting material with a higher energy gap than the light-emitting layer or delimited by ion-implanted semiconducting material, wherein the delimiting material shall prevent the propagation of dislocations between the sub-regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.