Semiconductor device and manufacturing method thereof
US6215146A · kind A · utility
11Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1998 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to provide a semiconductor device having high reliability and capable of high speed operation. The semiconductor device includes a silicon substrate, a silicon nitrided oxide film formed on the silicon substrate, and a gate electrode formed on the silicon nitrided oxide film. Nitrogen is distributed only in the vicinity of an interface between the silicon substrate and the silicon nitrided oxide film. In the vicinity of the interface, every nitrogen atom is bonded to two silicon atoms and one oxygen atom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.