Thin film transistor and method of fabricating the same
US6215154A · kind A · utility
73Cited by
10References
10Claims
0Family size
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Key dates
| Filing date | Feb 13, 1998 |
| Grant date | Apr 10, 2001 |
| Priority date | — |
| Expiry date | Feb 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.