Patent · US Expired

Fast structure dram

US6215706A · kind A · utility

5Cited by
1References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 1999
Grant dateApr 10, 2001
Priority date
Expiry dateMar 25, 2019

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/103
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present invention relates to a DRAM circuit including a plurality of memory cells organized in an array, including switches for associating with each end of each column of the array at least two latches controlled independently from each other to store data written into or read from the considered column.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.