Method and apparatus for evaluating semiconductor film, and method for producing the semiconductor film
US6218198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Feb 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Reflectance of a p-Si film crystallized by laser annealing is measured, a wavelength dependency of the reflectance is found, and a first order rate of change is calculated to determine a minimum value near a wavelength of 500 nm. The value is to be an inherent optical value under the laser power and relates to a grain size measured by Secco etching or the like. A number of correspondence between the optical value and the grain size are recorded and linearly plotted. By calculating the optical value from the reflectance in the p-Si film at in-line, the grain size is correspondingly determined. Thus, the semiconductor film can be in-line monitored, thereby improving a yield and saving a cost in producing a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.