Method for producing thin film transistor and thin film transistor using the same
US6218206A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Sep 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
Abstract
To provide a method of producing a TFT array and a liquid crystal display apparatus in which a contact resistivity of a pixel electrode and a drain electrode through a contact hole in an interlayer insulating film can be not more than 10E4.OMEGA. stably. A method of producing TFT of the present invention for a liquid crystal display apparatus includes the step of forming TFT, the step of forming an interlayer insulating film, in which the surface is made to be flat so that a level difference due to the TFT area is eliminated, on a transparent insulating substrate, the step of providing a contact hole on a drain electrode of the interlayer insulating film so as to forming a pixel electrode on the interlayer insulating film so that the pixel electrode is electrically connected with the drain electrode through the contact hole, and the step of after forming the contact hole on the interlayer insulating film, applying a surface treatment for cleaning the surface of the contact portion to the surface of the substrate including the surface of the drain electrode exposed from the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.