Method of fabricating a thinned CCD

US6218211A · kind A · utility

Assignee

• Scientific Imaging Technologies, Inc. · US

Inventors

• Morley M. Blouke · Beaverton, US
• Taner Dosluoglu · New York, US

Key dates

• Filing date: Mar 31, 2000
• Grant date: Apr 17, 2001
• Expiry date: Mar 31, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/80

Abstract

An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.